p4ke6.8a thru p4ke540a www.vishay.com vishay general semiconductor revision: 18-sep-12 1 document number: 88365 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 t rans z orb ? transient voltage suppressors devices for bi-direction applications for bi-directional types, use ca suffix (e.g. p4ke440ca). electrical characteristics apply in both directions. features ? glass passivated chip junction ? available in uni-directional and bi-directional ? 400 w peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? solder dip 275 c max. 10 s, per jesd 22-b106 ? aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automo tive, and telecommunication. mechanical data case: do-204al, molded epoxy body over passivated chip molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs-compliant, commercial grade base p/nhe3 - rohs-complia nt, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 class 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test note ? p4ke250ca to p4ke540a and p4ke250a to p4ke440ca for commercial grade only polarity: for uni-directional types the color band denotes cathode end, no marking on bi-directional types notes (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) 8.3 ms single half-s ine wave or equivalent sq uare wave, duty cycle = 4 pulses per minute maximum (3) v f = 3.5 v for p4ke220a and below; v f = 5.0 v for p4ke250a and above primary characteristics v wm 5.8 v to 459 v v br uni-directional 6.8 v to 540 v v br bi-directional 6.8 v to 440 v p ppm 400 w p d 1.5 w i fsm (uni-directional only) 40 a t j max. 175 c polarity uni-directional, bi-directional package do-204al (do-41) do-204al (do-41) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit peak pulse power di ssipation with a 10 /1000 s waveform (1) (fig.1) p ppm 400 w peak pulse current with a 10/1000 s waveform (1) i ppm see next table a power dissipation on infinite heatsink at t l = 75 c (fig. 5) p d 1.5 w peak forward surge current 8.3 ms single half-sine wave uni-directional only (2) i fsm 40 a maximum instantaneous forward voltage at 25 a for uni-directional only (3) v f 3.5/5.0 v operating junction and storage temperature range t j , t stg - 55 to + 175 c
p4ke6.8a thru p4ke540a www.vishay.com vishay general semiconductor revision: 18-sep-12 2 document number: 88365 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: t p ? 50 ms (2) surge current waveform per fi g. 3 and derate per fig. 2 (3) for bi-direction al types with v wm of 10 v and less the i d limit is doubled (4) all terms and symbols are cons istent with ansi/eee ca62.35 electrical characteristics (t a = 25 c unless otherwise noted) device type breakdown voltage v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i d (3) (a) maximum peak pulse current i ppm (2) (a) maximum clamping voltage at i ppm v c (v) maximum temperature coefficent at v br (%/c) min. max. p4ke6.8a 6.45 7.14 10 5.80 1000 38.1 10.5 0.057 p4ke7.5a 7.13 7.88 10 6.40 500 35.4 11.3 0.061 p4ke8.2a 7.79 8.61 10 7.02 200 33.1 12.1 0.060 p4ke9.1a 8.65 9.55 1.0 7.78 50 29.9 13.4 0.068 p4ke10a 9.5 10.5 1.0 8.55 10 27.6 14.5 0.073 p4ke11a 10.5 11.6 1.0 9.40 5.0 25.6 15.6 0.075 p4ke12a 11.4 12.6 1.0 10.2 1.0 24.0 16.7 0.078 p4ke13a 12.4 13.7 1.0 11.1 1.0 22.0 18.2 0.081 p4ke15a 14.3 15.8 1.0 12.8 1.0 18.9 21.2 0.084 p4ke16a 15.2 16.8 1.0 13.6 1.0 17.8 22.5 0.086 p4ke18a 17.1 18.9 1.0 15.3 1.0 15.9 25.2 0.088 p4ke20a 19.0 21.0 1.0 17.1 1.0 14.4 27.7 0.090 p4ke22a 20.9 23.1 1.0 18.8 1.0 13.1 30.6 0.092 p4ke24a 22.8 25.2 1.0 20.5 1.0 12.0 33.2 0.094 p4ke27a 25.7 28.4 1.0 23.1 1.0 10.7 37.5 0.096 p4ke30a 28.5 31.5 1.0 25.6 1.0 9.7 41.4 0.097 p4ke33a 31.4 34.7 1.0 28.2 1.0 8.8 45.7 0.098 p4ke36a 34.2 37.8 1.0 30.8 1.0 8.0 49.9 0.099 p4ke39a 37.1 41.0 1.0 33.3 1.0 7.4 53.9 0.100 p4ke43a 40.9 45.2 1.0 36.8 1.0 6.7 59.3 0.101 p4ke47a 44.7 49.4 1.0 40.2 1.0 6.2 64.8 0.101 p4ke51a 48.5 53.6 1.0 43.6 1.0 5.7 70.1 0.102 p4ke56a 53.2 58.8 1.0 47.8 1.0 5.2 77.0 0.103 p4ke62a 58.9 65.1 1.0 53.0 1.0 4.7 85.0 0.104 p4ke68a 64.6 71.4 1.0 58.1 1.0 4.3 92.0 0.104 p4ke75a 71.3 78.8 1.0 64.1 1.0 3.9 103 0.105 p4ke82a 77.9 86.1 1.0 70.1 1.0 3.5 113 0.105 p4ke91a 86.5 95.5 1.0 77.8 1.0 3.2 125 0.106 p4ke100a 95.0 105 1.0 85.5 1.0 2.9 137 0.106 p4ke110a 105 116 1.0 94.0 1.0 2.6 152 0.107 p4ke120a 114 126 1.0 102 1.0 2.4 165 0.107 p4ke130a 124 137 1.0 111 1.0 2.2 179 0.107 p4ke150a 143 158 1.0 128 1.0 1.9 207 0.108 p4ke160a 152 168 1.0 136 1.0 1.8 219 0.108 p4ke170a 162 179 1.0 145 1.0 1.7 234 0.108 p4ke180a 171 189 1.0 154 1.0 1.6 246 0.108 p4ke200a 190 210 1.0 171 1.0 1.5 274 0.108 p4ke220a 209 231 1.0 185 1.0 1.2 328 0.108 p4ke250a 237 263 1.0 214 1.0 1.2 344 0.110 p4ke300a 285 315 1.0 256 1.0 1.00 414 0.110 p4ke350a 333 368 1.0 300 1.0 0.83 482 0.110 p4ke400a 380 420 1.0 342 1.0 0.73 548 0.110 p4ke440a 418 462 1.0 376 1.0 0.66 602 0.110 p4ke480a 456 504 1.0 408 1.0 0.61 658 0.110 p4ke510a 485 535 1.0 434 1.0 0.57 698 0.110 p4ke540a 513 567 1.0 459 1.0 0.54 740 0.110
p4ke6.8a thru p4ke540a www.vishay.com vishay general semiconductor revision: 18-sep-12 3 document number: 88365 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - peak pulse power rating curve fig. 2 - pulse power or current vs. initial junction temperature fig. 3 - pulse waveform fig. 4 - typical junction capacitance uni-directional thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance, junction to lead r ? jl 66 c/ w typical thermal resistance , junction to ambient l lead = 10 mm r ? ja 100 ordering information (example) preferred pin unit weight (g) preferred package code base quantity delivery mode p4ke6.8a-e3/54 0.350 54 5500 13" di ameter paper tape and reel p4ke6.8ahe3/54 (1) 0.350 54 5500 13" diameter paper tape and reel 100 10 1 0.1 non-repetitive pulse waveform shown in fig. 3 t a = 25 c 0.1 1 10 100 1000 10 000 p ppm - peak pulse power (kw) t d - pulse width (s) 100 75 50 25 0 0 25 50 75 100 125 150 175 200 peak pulse power (p pp ) or current (i pp ) derating in percentage (%) t j - initial temperature (c) 0 1.0 2.0 3.0 4.0 0 50 100 150 t d t - time (ms) i ppm - peak pulse current, % i rsm t r = 10 s peak value i ppm half value - i ppm i pp 2 10/1000 s waveform as defined by r.e.a. t j = 25 c pulse width (t d ) is defined as the point where the peak current decays to 50 % of i ppm 10 100 1000 10 000 1 10 100 1000 measured at zero bias measured at stand-off voltage v wm t j = 25 c f = 1.0 mhz v sig = 50 mv p-p c j - junction capacitance (pf) v br - breakdown voltage (v)
p4ke6.8a thru p4ke540a www.vishay.com vishay general semiconductor revision: 18-sep-12 4 document number: 88365 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - power derating curve fig. 6 - maximum non-repetitive forward surge current uni-directional only fig. 7 - typical tran sient thermal impedance package outline dimensions in inches (millimeters) p d - power dissipation (%) t l - lead temperature (c) 60 hz resistive or inductive load 100 75 50 25 0 0 25 50 75 100 125 150 175 200 l = 0.375" (9.5 mm) lead lengths 1 10 100 10 100 number of cycles at 60 hz peak forward surge current (a) t j = t j max. 8.3 ms single half sine-wave 10 100 1 0.001 0.01 0.1 1 10 100 1000 t p - pulse duration (s) transient thermal impedance (c/w) do-204al (do-41) 1.0 (25.4) min. 1.0 (25.4) min. 0.205 (5.2) 0.160 (4.1) 0.107 (2.7) 0.080 (2.0) dia. 0.034 (0.86) 0.028 (0.71) dia.
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